PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs 880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
XZTHI54W |
1.3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
SUNLED COMPANY LTD
|
OD-148-C |
0.3556 mm, 1 ELEMENT, INFRARED LED, 880 nm TO-46
|
霍尼韦尔
|
OIS-210880 OIS-210880-X-T |
Series 210 - side view IR high intensity 880 nm
|
OSA Opto Light GmbH
|
OIS-330880 OIS-330880-X-TD OIS-330880-X-TU |
Series 330 - 1206 with Lens IR high intensity 880 nm
|
OSA Opto Light GmbH
|
MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
ACPM-5008-BLK ACPM-5008-TR1 |
UMTS Band8 (880-915MHz) 3x3mm Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
OIS-180880 OIS-180880-X-T |
Series 180 - 0805 lower height IR high intensity 880 nm
|
OSA Opto Light GmbH
|